Toshiba Semiconductor and Storage ULN2803APG,CN
TRANS 8NPN DARL 50V 0.5A 18DIP
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP
- Üretici
- Toshiba Semiconductor and Storage
- Üretici Parça Numarası
- Entegreci Parça Kodu
- Paketleme
- Bulk
Datasheet ve Belgeler
Teknik Özellikler
- Transistor Type
- 8 NPN Darlington
- Current - Collector (Ic) (Max)
- 500 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Vce Saturation (Max) @ Ib, Ic
- 1.6V @ 500µA, 350mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 350mA, 2V
- Power - Max
- 1.47W
- -40°C ~ 85°C (TA)
- Mounting Type
- Through Hole
- Package / Case
- 18-DIP (0.300", 7.62mm)
- Supplier Device Package
- 18-DIP
- Base Part Number
- ULN280*A
- Paketleme Şekli
- Bulk
