Microchip Technology VP2206N3-G

Teknik Özellikler

Paketleme Şekli

Bag-packed

Paket Miktarı

1000

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

640mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

900mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 10mA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

450 pF @ 25 V

Power Dissipation (Max)

740mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Base Part Number

VP2206