Infineon Technologies IQE013N04LM6CGSCATMA1

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

6000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

31A (Ta), 205A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.35mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 51µA

Gate Charge (Qg) (Max) @ Vgs

41 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3800 pF @ 20 V

Power Dissipation (Max)

2.5W (Ta), 107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-WHTFN-9-1

Package / Case

9-PowerWDFN