Inventchip IV2Q12080D7Z
GEN2, SIC MOSFET, 1200V 80MOHM,
N-Channel 1200 V 41A (Tc) 250W (Tc) Through Hole TO-263-7
- Üretici
- Inventchip
- Üretici Parça Numarası
- Entegreci Parça Kodu
- Durum
- Aktif
- RoHS
- Uyumlu
- Paketleme
- Tape & Reel (TR)
Teknik Özellikler
- Paketleme Şekli
- Tape & Reel (TR)
- Paket Miktarı
- 800
- FET Type
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 1200 V
- Current - Continuous Drain (Id) @ 25°C
- 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 18V
- Rds On (Max) @ Id, Vgs
- 104mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id
- 4.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs
- 53 nC @ 18 V
- Vgs (Max)
- +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds
- 1214 pF @ 800 V
- Power Dissipation (Max)
- 250W (Tc)
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-263-7
- Package / Case
- TO-263-8, D2PAK (7 Leads + Tab)
