ROHM Semiconductor R6014YNX3C16

Teknik Özellikler

Paketleme Şekli

Tube-packed

Paket Miktarı

50

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 12V

Rds On (Max) @ Id, Vgs

260mOhm @ 5A, 12V

Vgs(th) (Max) @ Id

6V @ 1.4mA

Gate Charge (Qg) (Max) @ Vgs

20 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

890 pF @ 100 V

Power Dissipation (Max)

132W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Base Part Number

R6014